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| advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 1 azv831 general description the azv831 is low bias current, low voltage operational amplifiers which can be designed into a wide range of applications. the azv831 has a quiescent current of 70 a per amplifier at 1.6v. the azv831 features optim al performance in low voltage, low bias current systems. the ic can provide rail-to-rail output swing under heavy loads. the common-mode input voltage range could be designed 200mv exceeding the supply voltage range, thus enables the customer to e xpand its application scope. the azv831 has a maximum input offset voltage of 2.5mv and its operating range is from 1.6v to 5.5v. azv831 is available in sc-70-5 and sot-23-5 packages. features ? single supply voltage range: 1.6v to 5.5v ? ultra- low input bias current: 1pa (typ.) ? offset voltage: 0.5mv (typ.), 2.5mv (max.) ? rail-to-rail input v cm : 200mv beyond rails rail-to-rail output swing 20k ? load ? supply current: 70 a ? unity gain stable gain bandwidth product: 1.0mhz ? slew rate: 0.45v/ s @ v cc =5.0v ? operation ambient temperature range: -40oc to 85oc applications ? sensors ? photodiode amplification ? battery-powered instrumentation ? pulse blood oximeter, glucose meter figure 1. package types of azv831 sc-70-5 sot-23-5
advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 2 azv831 pin configuration ks/k package sc-70-5/sot-23-5 output vcc vee in+ in- figure 2. pin configuration of azv831 (top view) function block diagram figure 3. functional block diagram of azv831 1 2 34 5 in- in+ vcc output class ab control + - + - vee 1 5 4 3 2 advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 3 azv831 ordering information azv831 - circuit type g1: green package blank: tube ks: sc-70-5 tr: tape & reel k: sot-23-5 package temperature range part number marking id packing type sc-70-5 -40 to 85 c AZV831KSTR-G1 l3 tape & reel sot-23-5 -40 to 85 c azv831ktr-g1 g4d tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 4 azv831 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v cc 6.0 v differential input voltage v id 6.0 v input voltage v in -0.3 to v cc +0.5 v operating junction temperature t j 150 oc sc-70-5 270 thermal resistance (junction to ambient) ja sot-23-5 220 oc /w storage temperature range t stg -65 to 150 oc lead temperature (soldering,10 seconds) t lead 260 oc esd (human body model) 6000 v esd (machine model) 400 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v cc 1.6 5.5 v operation ambient temperature range t a -40 85 oc advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 5 azv831 1.6v dc electrical characteristics v cc =1.6v, v ee =0, v cm =v cc /2, t a =25 c, unless otherwise noted. parameter symbol conditions min typ max unit input offset voltage v os 0.5 2.5 mv input bias current i b 1.0 5.0 pa input offset current i os 2.0 pa input common-mode voltage range v cm -0.2 1.8 v common-mode rejection ratio cmrr v cm =-0.2v to 1.8v 55 75 db large signal voltage gain g v r l =10k ? connect to v cc /2 v o =0.2v to 1.4v 90 110 db input offset voltage drift v os / t 2.0 v/ c v id =0.5v, r l =1k ? connect to v cc /2 30 50 output voltage swing from rail v ol /v oh v id =0.5v, r l =10k ? connect to v cc /2 3 15 mv sink i sink v out =v cc 8 10 output current source i source v out =0v 5 8.5 ma closed-loop output impedance z out f=10khz, g=1 (note 2) 9 ? power supply rejection ratio psrr v cc =1.6v to 5.0v, v cm =0.5v 70 80 db supply current i cc v cm advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 10 azv831 typical performance characteristics (continued) figure 8. offset voltage vs. common mode voltage figure 9. offset voltage vs. common mode voltage figure 10. output voltage vs. output current figure 11. output voltage vs. output current 01234 -6 -5 -4 -3 -2 -1 0 1 v cc =3.0v input offset voltage (mv) input common mode voltage (v) t a =-40 o c t a =25 o c t a =85 o c 0123456 -6 -4 -2 0 2 4 v cc =5.0v input offset voltage (mv) input common mode voltage (v) t a =-40 o c t a =25 o c t a =85 o c 0.1 1 10 1 10 100 1000 v cc =1.6v, v ee =0v output voltage to supply rail (mv) output current (ma) sink current source current 0.1 1 10 1 10 100 1000 v cc =1.8v, v ee =0v output voltage to supply rail (mv) output current (ma) sink current source current advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 11 azv831 typical performance characteristics (continued) figure 12. output voltage vs. output current figure 13. output voltage vs. output current figure 14. output short circuit current vs. temperature figure 15. output s hort circuit current vs. temperature 0.01 0.1 1 10 1 10 100 1000 v cc =3.0v, v ee =0v output voltage to supply rail (mv) output current (ma) sink current source current 0.01 0.1 1 10 100 1 10 100 1000 10000 v cc =5.0v, v ee =0v output voltage to supply rail (mv) output current (ma) sink current source current -40-20 0 20406080100 0 20 40 60 80 100 120 140 160 v ee =0v v o short to v cc output short circuit current (sink) (ma) temperature ( o c) v cc =1.6v v cc =1.8v v cc =3.0v v cc =5.0v -40-20 0 20406080100 0 20 40 60 80 100 120 140 160 180 200 v ee =0v v o short to v ee output short circuit current (source) (ma) temperature ( o c) v cc =1.6v v cc =1.8v v cc =3.0v v cc =5.0v advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 12 azv831 typical performance characteristics (continued) figure 16. output short circuit current figure 17. output short circuit current vs. supply voltage vs. supply voltage figure 18. output voltage swing vs. supply voltage figure 19. output voltage swing vs. supply voltage 12345 0 20 40 60 80 100 120 output short current (sink) (ma) supply voltage (v) v ee =0v v o short to v cc 12345 0 20 40 60 80 100 120 140 160 output short current (source) (ma) supply voltage (v) v ee =0v v o short to v ee 0.81.01.21.41.61.82.02.22.42.6 1.5 2.0 2.5 3.0 3.5 4.0 r l =10k output voltage to supply rail (mv) dual supply voltage (v) positive swing negative swing 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 20 21 22 23 24 25 26 27 r l =1k output voltage to supply rail (mv) dual supply voltage (v) positive swing negative swing advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 13 azv831 typical performance characteristics (continued) figure 20. output voltage swing vs. temperature figure 21. ou tput voltage swi ng vs. temperature figure 22. gain and phase vs. frequency figure 23. gain and phase vs. frequency and resistive load and capacitive load -40-20 0 20406080100 12 16 20 24 28 32 36 40 44 48 negative swing r l =1k output voltage to supply rail (mv) temperature ( o c) v cc =0.8v,v ee =-0.8v v cc =2.5v,v ee =-2.5v v cc =0.8v,v ee =-0.8v v cc =2.5v,v ee =-2.5v positive swing -40 -20 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10 positive swing r l =10k v cc =0.9v,v ee =-0.9v v cc =1.5v,v ee =-1.5v v cc =0.9v,v ee =-0.9v v cc =1.5v,v ee =-1.5v output voltage to supply rail (mv) temperature ( o c) negative swing 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.8v, v ee =-0.8v open loop gain (db) frequency (hz) r l =100k r l =10k r l =1k r l =8 phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.8v, v ee =-0.8v r l =100k open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 14 azv831 typical performance characteristics (continued) figure 24. gain and phase vs. frequency figure 25. gain and phase vs. frequency and capacitive load and resistive load figure 26. gain and phase vs. frequency figure 27. gain and phase vs. frequency and capacitive load and capacitive load 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.8v, v ee =-0.8v r l =10k open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.9v, v ee =-0.9v open loop gain (db) frequency (hz) r l =100k r l =10k r l =1k r l =8 phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.9v, v ee =-0.9v r l =100k open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =0.9v, v ee =-0.9v r l =10k open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 15 azv831 typical performance characteristics (continued) figure 28. gain and phase vs. frequency figure 29. gain and phase vs. frequency and resistive load and capacitive load figure 30. gain and phase vs. frequency figure 31. gain and phase vs. frequency and capacitive load and resistive load 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =1.5v, v ee =-1.5v open loop gain (db) frequency (hz) r l =100k r l =10k r l =1k r l =8 phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =1.5v, v ee =-1.5v r l =100k open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =1.5v, v ee =-1.5v r l =10k open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =2.5v, v ee =-2.5v open loop gain (db) frequency (hz) r l =100k r l =10k r l =1k r l =8 phase margin (degree) advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 16 azv831 typical performance characteristics (continued) figure 32. gain and phase vs. frequency figure 33. gain and phase vs. frequency and capacitive load and capacitive load figure 34. output impedance vs. frequency figure 35. thd+n vs. output voltage 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =2.5v, v ee =-2.5v r l =100k open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90 100 v cc =2.5v, v ee =-2.5v r l =10k open loop gain (db) frequency (hz) c l =100pf c l =200pf c l =300pf phase margin (degree) 100 1k 10k 100k 1 10 100 1000 v cc =1.6v to 5v v ee =0v g=1 g=10 g=100 output impedance ( ) frequency (hz) 0.01 0.1 1 1e-3 0.01 0.1 1 10 g=1, r l =10k , c l =100pf thd (%) output voltage (v) v cc =0.8v,v ee =-0.8v v cc =0.9v,v ee =-0.9v v cc =1.5v,v ee =-1.5v v cc =2.5v,v ee =-2.5v advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 17 azv831 typical performance characteristics (continued) figure 36. thd+n vs. frequency figure 37. input voltage noise density v in v in 50mv/div 50mv/div v out v out 50mv/div 50mv/div time (2 s/div) time (2 s/div) figure 38. small signal pulse response figure 39. small signal pulse response 100 1k 10k 1e-3 0.01 0.1 bandwidth<10hz to 22khz v out =100mv rms , a v =1, r l =10k , c l =100pf thd (%) frequency (hz) v cc =0.8v, v ee =-0.8v v cc =0.9v, v ee =-0.9v v cc =1.5v, v ee =-1.5v v cc =2.5v, v ee =-2.5v 100 1k 10k 10n 100n v cc =5.0v, v ee =0v, g=1 input voltage noise (v/ hz) frequency (hz) c l =100pf, r l =100k ? , a v =1 c l =100pf, r l =100k ? , a v =1 v cc =1.6v v ee =0v v cc =1.8v v ee =0v advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 18 azv831 typical performance characteristics (continued) v in v in 50mv/div 50mv/div v out v out 50mv/div 50mv/div time (2 s/div) time (2 s/div) figure 40. small signal pulse response figure 41. small signal pulse response v in v in 500mv/div 500mv/div v out v out 500mv/div 500mv/div time (10 s/div) time (10 s/div) figure 42. large signal pulse response figure 43. large signal pulse response c l =100pf, r l =100k ? , a v =1 c l =100pf, r l =100k ? , a v =1 c l =200pf, r l =100k ? , a v =1 c l =200pf, r l =100k ? , a v =1 v cc =3.0v v ee =0v v cc =5.0v v ee =0v v cc =1.6v v ee =0v v cc =1.8v v ee =0v advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 19 azv831 typical performance characteristics (continued) v in v in 1v/div 2v/div v out v out 1v/div 2v/div time (10 s/div) time (10 s/div) figure 44. large signal pulse response figure 45. large signal pulse response v in v in 500mv/div 500mv/div v out v out 500mv/div 500mv/div time (10 s/div) time (10 s/div) figure 46. large signal pulse response figure 47. large signal pulse response c l =200pf, r l =100k ? , a v =1 c l =200pf, r l =10k ? , a v =1 v cc =3.0v v ee =0v v cc =5.0v v ee =0v c l =200pf, r l =100k ? , a v =1 v cc =1.6v v ee =0v v cc =1.8v v ee =0v c l =200pf, r l =10k ? , a v =1 advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 20 azv831 typical performance characteristics (continued) v in v in 1v/div 2v/div v out v out 1v/div 2v/div time (10 s/div) time (10 s/div) figure 48. large signal pulse response figure 49. large signal pulse response v in v in 1v/div 50mv/div v out v out 1v/div 1v/div time (200 s/div) time (20 s/div) figure 50. no phase reversal figure 51. overload recovery time f=1khz, r l =10k ? , v in =6v pp, a v =1 v out v in c l =100pf, r l =100k ? , a v =-50 v in =0 to -100mv v cc =3.0v v ee =0v c l =200pf, r l =10k ? , a v =1 v cc =5.0v v ee =0v c l =200pf, r l =10k ? , a v =1 v cc =2.5v v ee =-2.5v v cc =2.5v v ee =-2.5v advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 21 azv831 typical performance characteristics (continued) v in 50mv/div v out 1v/div time (20 s/div) figure 52. overload recovery time c l =100pf, r l =100k ? , a v =-50, v in =0 to -100mv v cc =2.5v v ee =-2.5v advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 22 azv831 mechanical dimensions sc-70-5 unit: mm(inch) 2.000(0.079) 2.200(0.087) 2.150(0.085) 2.450(0.096) 1.150(0.045) 1.350(0.053) 0.650(0.026)typ 1.200(0.047) 1.400(0.055) 0.150(0.006) 0.350(0.014) 0.525(0.021)ref 0.080(0.003) 0.150(0.006) 0 8 0.200(0.008) 0.260(0.010) 0.460(0.018) 0.000(0.000) 0.100(0.004) 0.900(0.035) 1.000(0.039) 0.900(0.035) 1.100(0.043) advance datasheet single low bias current, low voltage, rail-to-rail input/output cmos operational amplifier nov. 2011 rev. 1. 1 bcd semiconductor manufacturing limited 23 azv831 mechanical dimensions (continued) sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited |
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